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DMG1023UV
1.6
1.2
10
8
6
0.8
I D = -250μA
I D = -1m A
4
T A = 25°C
0.4
2
0
0
-50 -25 0 25 50 75 100 125 150
T A , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
100
f = 1MHz
C iss
0.2
1,000
0.4 0.6 0.8 1.0
-V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
T A = 150°C
1.2
100
T A = 125°C
10
C oss
1
C rss
10
1
T A = 85°C
T A = 25°C
0
5 10 15
20
0
4 8 12 16
20
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
R θ JA (t) = r(t) * R θ JA
R θ JA = 260°C/W
D = 0.02
0.01
D = 0.01
P(pk)
t 1
t 2
D = 0.005
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 /t 2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01 0.1 1
10
100
1,000
t 1 , PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
DMG1023UV
Document number: DS31975 Rev. 6 - 2
4 of 6
www.diodes.com
March 2012
? Diodes Incorporated
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